Thickness, n, and k are monitored on the device and in the active device structures. No guesswork is needed to relate proxy areas thickness to the active areas—the Trajectory T³ measures and reports both individually. No need to keep your measurements on the sidelines.

Trajectory T³ monitors a large area of the full wafer area (not just a few spots) in seconds. Multiple thicknesses are measured: narrow and wide trench gap fill depths are simultaneously measured along with nitride thickness. Similarly, IMD and ILD layers are measured in patterned areas.